Isolation structures for integrated circuits and modular methods of forming the same

ABSTRACT

A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 11/444,102,filed May 31, 2006, which is incorporated herein by reference in itsentirety. This application is related to application Ser. No.10/262,567, filed Sep. 29, 2002, now U.S. Pat. No. 6,855,985, which isincorporated herein by reference in its entirety.

FIELD OF THE INVENTION

This invention relates to semiconductor chip fabrication and inparticular to methods of fabricating and electrically isolating bipolar,CMOS and DMOS transistors and passive components in a semiconductor chipmonolithically at high densities without the need for epitaxial layersor high temperature fabrication processing steps.

BACKGROUND OF THE INVENTION

In the fabrication of semiconductor integrated circuit (IC) chips, it isfrequently necessary to electrically isolate devices that are formed onthe surface of the chip. There are various ways of doing this. A way isby using the well-known LOCOS (Local Oxidation Of Silicon) process,wherein the surface of the chip is masked with a relatively hardmaterial such as silicon nitride and a thick oxide layer is grownthermally in an opening in the mask. Another way is to etch a trench inthe silicon and then fill the trench with a dielectric material such assilicon oxide, also known as trench isolation. While both LOCOS andtrench isolation can prevent unwanted surface conduction betweendevices, they do not facilitate complete electrical isolation.

Complete electrical isolation is necessary to integrate certain types oftransistors including bipolar junction transistors and variousmetal-oxide-semiconductor (MOS) transistors including power DMOStransistors. Complete isolation is also needed to allow CMOS controlcircuitry to float to potentials well above the substrate potentialduring operation. Complete isolation is especially important in thefabrication of analog, power, and mixed signal integrated circuits.

Non-Isolated CMOS Fabrication and Construction

Conventional CMOS wafer fabrication, while offering high densitytransistor integration, does not facilitate compete electrical isolationof its fabricated devices. FIG. 1A for example illustrates a simplifiedcross sectional view of a prior-art twin-well CMOS 1. FIG. 1 Aillustrates the formation of N-well (NW) regions 4A and 4B and P-well(PW) regions 3A and 3B in P-type substrate 2 prior to transistorfabrication.

FIG. 1B illustrates a CMOS structure 10 after transistor formationincluding N-channel MOSFETs fabricated within P-well 3A, P-channelMOSFETs formed within N-well 4B, separated by intervening LOCOS fieldoxide layer 11. The combination of P-channel and N-channel MOSFETS,together constitute complementary MOS transistors, otherwise referred toas CMOS.

Within PW region 3A, N-channel MOSFETs are formed comprising shallow N+source-drain implanted region 14 with lightly doped drain (LDD) 15,polysilicon gate 19, and P+ to PW contact region 13. Within NW region4B, P-channel MOSFETs are formed comprising shallow P+ source-drainimplanted region 17 with LDD 18, polysilicon gate 19, and N+ to NWcontact region 12. The NW and PW regions are ion implanted, generallywith a subsequent high-temperature diffusion to drive the dopant intothe substrate to a greater depth than the implant. The depth of thewells is generally greater for higher-voltage devices, e.g. 12V, thanfor lower voltage CMOS, especially at 3.3V or lower.

The transistor packing density of CMOS structure 10 is largely limitedby the area wasted by LOCOS oxide 11, which cannot be reduced to deepsubmicron dimensions without encountering numerous problems. Anotherlimitation of CMOS structure 10 is its gate construction comprisingdoped polysilicon 19 without any overlying shunting metal. Astransistors are scaled to smaller dimensions, the gate resistancecontributes to slower switching speeds and increased propagation delays.The impact of this gate resistance practically limits CMOS scaling togate dimensions in the 0.8 to 0.6 micron range.

In analog circuitry another major limitation of CMOS 10 is its lack ofcomplete electrical isolation. As shown, PW region 3A is shorted tosubstrate 2. Since P-well 3A electrically forms the body (or back gate)of the NMOS transistors, and since P-type substrate 2 is necessarilybiased to the most negative on-chip potential (herein referred to as“ground”), then the body connection of every N-channel transistor isbiased to ground, limiting their useful operating voltage range andsubjecting the N-channel MOSFETs to unwanted substrate noise.

For CMOS transistors with gate lengths of 0.35 microns or smaller,structure 80 shown in FIG. 2A represents a common prior art realizationof CMOS. In this structure, LOCOS field oxide layer 11 has been replacedwith dielectrically filled shallow trenches 81 having dimensions onehalf the minimum LOCOS size or less. The polysilicon gate includes ametal silicide (such as platinum-silicide) to reduce gate resistance.The metal strapped polysilicon sandwich is sometimes referred to as apolycide layer, a concatenation of polysilicon and silicide. Note thatin CMOS structure 80, despite its capability for smaller devices andhigh integration densities, P-well 3A is still electrically shorted toP-type substrate 2.

N-channel MOSFET 25, shown in FIG. 1C in cross section, is one of thenon-isolated N-channel devices of LOCOS type CMOS structure 10,including P-well 27 formed in P-type substrate 26, N+ implant region 33,gate-oxide 36 located above PW channel region 35, topped withpolysilicon gate 38 and gate silicide 39. Lightly doped drain extension34 is self-aligned to gate 38 while N+ region 33 is self-aligned tosidewall spacer 37. Also in MOSFET 25, a single layer of metalinterconnection 41 is also included for illustration purposes, althoughan integrated circuit may utilize from 2- to 10-layers of metalinterconnection. Interconnect metal 41, typically an aluminum-copper oraluminum-copper-silicon alloy, contacts N+ region 33 through contactopenings in inter-level dielectric (ILD) 32 and through thin barriermetal 40. The barrier metal, typically comprising titanium, platinum, ortungsten is introduced to prevent metal spikes (i.e. filaments) fromalloying through the N+ to P-well junction during processing andshorting out the transistor's junctions.

Note the unique shaped oxide 31 has the appearance of a bird's head andextended beak, where the oxide thickness is graduated over a distance ofseveral tenths of a micrometer. This shape results from stress existingbetween the silicon and an overlying silicon nitride layer used tolocally prevent oxidation in the active device regions. As the fieldoxidation progresses, oxygen diffuses under the nitride mask lifting itsedges to produce the uniquely characteristic shape. The bird's beak hasseveral unfortunate effects for smaller transistors, affecting thetransistor's threshold and gain, and wasting usable real estate. In someprocesses a P-type field dopant PFD 29 is introduced prior to LOCOSfield oxidation to raise the field threshold and suppress surfaceleakage between any two adjacent N-type regions. An N-type field dopantNFD 30 may also be introduced in the field areas over N-well regions 28to prevent parasitic leakages between adjacent P-type regions. Theproblem with both NFD and PFD regions is they diffuse too deep duringfield oxidation and can adversely impact a transistor's electricalcharacteristics, especially for deep submicron devices.

Another characteristic of P-well 27 is its non-Gaussian doping profile,especially in channel region 35. One possible doping profile along thevertical section line A-A′ is shown in dopant concentration graph 50 inFIG. 1D. As shown, the dopant concentration of PW 27, shown as curve 52,follows a Gaussian profile intersecting with the constant dopingconcentration of substrate 26, shown as horizontal line 51. Since bothPW 27 and substrate 26 are P-type, no P—N junction exists where theymeet, and the P-well is not isolated from the substrate. Peaks 53, 54,and 55 represent implanted P-type dopant located in the channel regionto prevent bulk punch-through breakdown, to prevent sub-surface leakage,and to set the threshold voltage of the device respectively. The graphshown, however, represents an ideal one-dimensional doping profile andignores the impact of lateral intrusion under the gate by field dopantor field oxide, both of which alter the two-dimensional and eventhree-dimensional doping profiles, often in adverse ways. Scaling theLOCOS to smaller dimensions of thinner final thicknesses is problematicsince the shape of the bird's beak becomes sensitive to slight processvariations.

N-channel MOSFET 100 shown in the cross section of FIG. 2B avoids theaforementioned LOCOS issues by replacing the field oxidation processwith a dielectric filled trench 104. Methods for formingdielectrically-filled trench isolation regions are discussed in arelated application Ser. No. 11/298,075, filed Dec. 9, 2005, titled“Isolation Structures for Semiconductor Integrated Circuit Substratesand Methods of Forming the same” by Richard K. Williams, which isincorporated herein by reference in its entirety. Without LOCOS, nobird's beak is present to encroach on polysilicon gate 113 or impact thedoping of channel region 112, and device 100 can be scaled to smallerdimensions. Like its predecessors, N-channel MOSFET 100 is formed inP-well 102 which is electrically shorted to P-substrate 101 and does notprovide electrical isolation.

FIG. 3A illustrates several common prior art process flows forfabricating non-isolated CMOS using LOCOS or trench isolation. Shown asa series of cards, those cards having square corners are mandatoryprocessing steps while those with clipped corners (such as NFD implant)represent optional process steps.

FIG. 3B illustrates a schematic representation of a CMOS pair 130comprising P-channel MOSFET 132 and N-channel MOSFET 131 and fabricatedusing either of the prior art fabrication sequences described. Eachtransistor includes four terminals—a source S, a drain D, a gate G and abody or back-gate B. In the case of P-channel MOSFET 132, itssource-to-body junction is schematically represented as P—N diode 136,and its drain-to-body junction is illustrated by P—N diode 137.Resistance of the N-well region is illustrated as alumped-circuit-element resistance 138, but in reality is spatiallydistributed across the device, especially for large area power devices.

One weakness of P-channel 132 is that it inherently includes asubstrate-PNP 139, parasitic to the device's construction. As shown,with the source acting as an emitter injecting holes into the N-wellbase, some fraction of those holes may penetrate the N-well base withoutrecombining and may ultimately be collected by the substrate as holecurrent. If the gain of the parasitic PNP 139 is too high, especially inthe case of lightly-doped shallow N-wells, bipolar snapback breakdown(also known as BVceo or BVcer breakdown) may result and the device maybe damaged or destroyed. Without isolation, it is difficult to controlthe characteristics of parasitic PNP 139 without affecting the othercharacteristics of MOSFET 132, such as its threshold voltage.

N-channel MOSFET 131, with its source-to-body junction schematicallyrepresented by P—N diode 133; and drain-to-body junction represented byP—N diode 134, has its body shorted to the substrate, represented hereby the ground symbol, and therefore is not isolated. Resistance of theP-well and surrounding P-type substrate region is illustrated as alumped-circuit-element resistance 135, which in reality is spatiallydistributed across the device and the substrate, especially for largearea power devices. Aside from the circuit implications of a groundedbody connection, the forward biasing of drain diode 134 injectselectrons into the P-type substrate which may travel considerabledistances across an integrated circuit (chip) before recombining orbeing collected. Such parasitic ground currents can adversely impactother devices and impair proper circuit operation.

Since most CMOS pairs are used in digital circuits as logic gates (likeinverter 150 in FIG. 3C) parasitic diodes 154 and 153 remain reversebiased for all operating conditions of N-channel 151 and P-channel 152normally encountered. If the same inverter, however, were used to drivean inductor in a Buck switching regulator, diode 153 will becomeforward-biased whenever P-channel 152 turns off, injecting current intothe substrate and potentially causing unwanted phenomena to occur.

A similar problem occurs when using non-isolated CMOS for implementingcascode clamped output driver 160 shown in FIG. 3D. In this circuit, theoutput voltage of the inverter comprising N-channel 161 and P-channel163 is clamped to some maximum positive voltage by the N-channelfollower 162 which limits the output voltage to one threshold voltageV_(TN)(162) below its gate bias V_(bias). Through its cascode action theinverter is able to reduce, i.e. “level shift”, its output to a smallervoltage range than the supply voltage Vcc. Diodes 164, 165, 166, and 167all remain reverse biased during normal operation. The problem is thatsince diode 166 is reverse-biased to a voltage equal to Vout, thethreshold of N-channel 162 increases in proportion to the output voltageand thereby limits the circuit's maximum output voltage. If N-channelMOSFET 162 were isolated, its source and body could be shorted to theoutput, so that diode 166 would never be reverse-biased and itsthreshold voltage would remain constant.

Junction-Isolated CMOS Fabrication and Construction

The need for electrically isolated CMOS is further exemplified incircuit 150 of FIG. 4A, where a pair of N-channel MOSFETs 151 and 152are connected in a totem pole configuration and driven out of phase bybreak-before-make (BBM) circuit 155. To achieve a low on-resistanceindependent of its operating condition, high side N-channel MOSFET 152requires a source-body short (so that V_(SB)=0 at all times). Floatingbootstrap capacitor 157 powers floating gate drive circuitry 156 toprovide adequate gate bias V_(GS) for MOSFET 152, even when thehigh-side device is on and Vout is approximately equal to Vcc. Toimplement the bootstrap drive, both floating circuit 156 and high-sideMOSFET 152 must be electrically isolated from the IC's substrate (i.e.ground).

Another circumstance requiring isolation is illustrated in Buckconverter 170 of FIG. 4B, where a push-pull CMOS pair including alow-side MOSFET 171 and a high-side MOSFET 172 controls the current ininductor 177 and in closed loop operation, regulates a constant voltageacross output capacitor 178. While diode 173 anti-parallel to high-sideMOSFET 172 remains reverse-biased during normal operation, drain-to-bodydiode 174 of low-side MOSFET 171 does not remained reverse-biased. Eachtime high-side MOSFET 172 is turned off; inductor 177 drives theinverter output voltage Vx below ground forward-biasing diode 174. Ifconduction current in the MOSFET's body is sufficient to develop avoltage drop across resistance 175, electrons may be injected deep intothe substrate via the bipolar transistor action of parasitic NPN 176 andmay be collected by any other N region 179. The resulting substratecurrent can adversely affect efficiency, and cause circuit malfunction.If the low-side MOSFET 175 were isolated, the diode current could becollected without becoming unwanted substrate current.

The most common form of complete electrical isolation is junctionisolation. While not as ideal as dielectric isolation where oxidesurrounds each device or circuit, junction isolation has to date offeredthe best compromise between manufacturing cost and isolationperformance. As shown in FIG. 5A, the prior art CMOS isolation requiresa complex structure comprising N-type epitaxial layer 203 grown atop aP-type substrate 201 and surrounded by an annular ring of deep P-typeisolation P_(ISO) 204 electrically connecting to the P-type substrate tocompletely isolate an N-type epitaxial island by P-type material belowand on all sides. Growth of epitaxial layer 203 is also slow and timeconsuming, representing the single most expensive step in semiconductorwafer fabrication. The isolation diffusion is also expensive, formedusing high temperature diffusion for extended durations (up to 18hours). To be able to suppress parasitic devices, a heavily doped N-typeburied layer NBL 202 must also be masked and selectively introducedprior to epitaxial growth.

To minimize up-diffusion during epitaxial growth and isolationdiffusion, a slow diffuser such as arsenic (As) or antimony (Sb) ischosen to form NBL 202. Prior to epitaxial growth however, this NBLlayer must be diffused sufficiently deep to reduce its surfaceconcentration, or otherwise the concentration control of the epitaxialgrowth will be adversely impacted. Because the NBL layer is comprised ofa slow diffuser, this pre-epitaxy diffusion process can take more thanten hours.

Once isolation is complete CMOS fabrication can commence in a mannersimilar to the aforementioned discussion. Referring again to FIG. 5A,P-well 205 and N-well 206 are implanted and diffused to facilitateN-channel and P-channel fabrication. Since they are formed in anisolated epitaxial pocket of N-type silicon however, they advantageouslyare completely isolated from the substrate.

Since junction isolation fabrication methods rely on high temperatureprocessing to form deep diffused junctions and to grow epitaxial layers,these high temperature processes are expensive and difficult tomanufacture, and are incompatible with large diameter wafermanufacturing, exhibiting substantial variation in device electricalperformance and preventing high transistor integration densities. Thecomplexity of junction isolation is illustrated in flowchart 220 of FIG.5B. After all the steps shown are performed, the wafer must proceed tothe formation of a field oxide layer, and only then may the extensiveCMOS manufacturing portion of the flow begin.

Another disadvantage of junction isolation is the area wasted by theisolation structures and otherwise not available for fabricating activetransistors or circuitry. In FIG. 5C, the area needed to satisfy certainminimum design rules is illustrated for a buried layer 212, P-typediffused junction isolation 213, and a diffused heavily doped N-typesinker 214 (overlapping onto NBL 212B). As a further complication, withjunction isolation the design rules (and the wasted area) depend on themaximum voltage of the isolated devices. For an epitaxial layer grown toa thickness x_(epi), the actual thickness supporting voltage x_(net) isless since the depth of P+ junction 216 and the up-diffusion of NBL2121A must be subtracted from the total thickness to determined thevoltage capability of the isolated devices.

Common epitaxial thicknesses range from 4 microns to 12 microns. Therequired opening for the isolation region implant depends on theepitaxial thickness being isolated. The P_(ISO) mask opening must besufficiently large to avoid starved diffusion effects. A starveddiffusion occurs when two-dimensional (or three-dimensional) diffusionreduces the dopant concentration gradient and slows the verticaldiffusion rate. In fact unless the P_(ISO) opening is sufficient, theisolation may not even reach the substrate. As a general rule of thumbto avoid starved diffusion, the opening for the isolation implantationshould have a dimension y₁ approximately equal to the epitaxialthickness x_(epi).

Ignoring two-dimensional effects, during the isolation drive-in cycle,lateral diffusion occurs at a rate approximately 80% that of thevertical (per side). So the actual surface width of a diffused isolationy₂ is approximately equal to [x_(epi)+2·(0.8·x_(epi))]=2.6·x_(epi) Usingthis guideline, isolating a 7 micron epitaxial layer requires an 18micrometer wide isolation ring. Further spacing y₆ must be included toprevent avalanche breakdown between the bottom of isolation 213 and NBL212A.

Similar design rules must be considered for fabricating a diffusedlow-resistance sinker 214 for connecting NBL layer 212B to the surface.The N_(sinker) mask opening must have a dimension y₃ approximately equalto its depth xnet. This results in a sinker surface width y₄ equal to[x_(net)+2·(0.8·x_(net))]=2.6·x_(net). Assuming that x_(net)=5 microns(for a 7 micron epitaxial layer), then the sinker ring has a surfacewidth of 13 micrometers. Allowing 2 micrometers of space y₅ between theisolation and sinker rings means the surface area required for a sinkerand an adjacent isolation is [y₂+y₅+y₄]=[18+2+13] or 33 micrometers.Obviously, conventional epitaxial junction isolation, despite itselectrical benefits, is too area wasteful to remain a viable technologyoption for mixed signal and power integrated circuits.

An Epiless Fully-Isolated BCD Process with Contouring Implants

As disclosed in U.S. Pat. No. 6,855,985, issued Feb. 15, 2005, entitled“Modular Bipolar-CMOS-DMOS Analog Integrated Circuit & Power TransistorTechnology,” by Richard K. Williams, et. al., incorporated herein byreference, a fully-isolated process integrating CMOS, bipolar and DMOStransistors can be achieved without the need for high temperaturediffusions or epitaxy. As illustrated in the multi-voltage CMOS 250 ofFIG. 6, the principal of the previously disclosed modular BCD processrelies on high-energy (MeV) ion implantation through contoured oxides toproduce self-forming isolation structures with virtually no hightemperature processing required. This low-thermal budget processbenefits from “as-implanted” dopant profiles that undergo little or nodopant redistribution since no high temperature processes are employed.

In the structure shown, deep N-type layers (DN) 253A and 253B, implantedthrough LOCOS field oxide layer 255, form a conformal isolationstructure that encloses multi-voltage CMOS. For example, DN layer 253Acontains 5V CMOS wells comprising a surface P-well 255 (PW1) with a morehighly concentrated buried P-well 254 (PW1B), and a surface N-well 253(NW1) with a more highly concentrated buried N-well 252 (NW1B), withdoping profiles optimized for 5V N-channel and P-channel MOSFETs. Inanother region on the same die DN layer 253B contains 12V CMOS wellscomprising a surface P-well 259 (PW2) with a more highly concentratedburied P-well 258 (PW2B), and a surface N-well 257 (NW2) with a morehighly concentrated buried N-well 256 (NW2B), with doping profilesoptimized for 12V N-channel and P-channel MOSFETs. The same process isable to integrated bipolar transistors, and a variety of power devices,all tailored using conformal and chained ion implantations of differingdose and energy. (Note: As used herein, the term “conformal” refers to aregion or layer of dopant (a) that is formed by implantation through alayer (often an oxide layer) at the surface of the semiconductormaterial, and (b) whose vertical thickness and/or depth in thesemiconductor material vary in accordance with the thickness and/orother features of the surface layer, including any openings formed inthe surface layer.)

While this “epi-less” low thermal budget technique has many advantagesover non-isolated and epitaxial junction isolated processes, itsreliance on LOCOS imposes certain limitations on its ability to scale tosmaller dimensions and higher transistor densities. The principal ofconformal ion implantation in the LOCOS based modular BCD process is theconcept that by implanting through a thicker oxide layer dopant atomswill be located closer to the silicon surface and by implanting througha thinner oxide layer, the implanted atoms will be located deeper in thesilicon, away from the surface.

The scaling problem of conformal implantation is illustrated in FIG. 7.With LOCOS 282 as shown in FIG. 7A, the natural slope of the bird's beakregion creates a smooth continuous gradation in oxide thickness that ismirrored by a smooth continuous gradation 285 in the depth of theimplanted DN layer. The floor isolation region 284 sets theone-dimensional device characteristics, but the isolation sidewall isself forming, tapering toward the surface to the right of line 287 asthe oxide thickness 286 increases. No implant is introduced throughphotoresist mask layer 283.

But to improve CMOS transistor integration density, the bird's beaktaper must be reduced into a more vertical structure so that the devicescan placed more closely for higher packing densities. For example, inFIG. 7B, the bird's beak region 296 to the right of line 297 is muchsteeper. The result is a greater portion of the implant is uniformlytouching the bottom of LOCOS 292, and the transition 295 between thedeep portion 294 and the field area 298 is more vertical and moreabrupt. As a result, the width of the isolation for sidewall portion 295is narrowed and the isolation quality is sacrificed.

To make the point more extreme, FIG. 7C illustrates a nearly verticaloxide profile for LOCOS 302, where the graded portion 306 to the rightof line 307 is very is very short. The resulting implant profile shows avery thin abrupt transition 305 between the deep isolation 304 and thesurface doping 308. Hence, there is a conflict. Region 305 is too narrowto provide good isolation yet only by making a steeper oxide can moretransistors be packed into the same real estate.

What is needed is a new isolation structure that provides completeelectrical isolation and high density integration without the use ofepitaxial layers or long, high-temperature processes.

SUMMARY OF THE INVENTION

In accordance with this invention, a variety of isolation structuresovercome the above-referenced problems. These new isolation structuresare formed in a substrate with no epitaxial layer, and include a deepfloor isolation layer that is formed by high-energy implantation of adopant of opposite conductivity to the substrate. In one group ofembodiments a dielectric-filled trench is used as at least a portion ofa sidewall of the isolation structure. The dielectric-filled trench mayextend into the deep floor isolation region. The dielectric-filledtrenches may extend through and some distance below the deep floorisolation region.

In an alternative embodiment, the dielectric-filled trench extends onlypart of the distance to the deep floor isolation region, and a dopedsidewall region of opposite conductivity type to the substrate extendsbetween the bottom of the trench and the deep floor isolation region.Advantageously, the doped sidewall region is formed by implanting dopantthrough the floor of the trench before the trench is filled with adielectric.

In another embodiment, a stack of chain-implanted sidewall dopantregions extends from the surface of the substrate to the deep floorisolation region and dielectric-filled trenches are formed within oradjacent to the sidewall dopant regions.

In most of the embodiments described above, the trench may be filledwith a conductive material such as doped polysilicon and lined with adielectric layer such as oxide. This allows electrical contact to bemade with the deep floor isolation region from the surface of thesubstrate, either directly via the trench or via the trench and thedoped sidewall regions.

The trenches and doped sidewall regions may be in an annular shape sothat they enclose an isolated pocket of the substrate. (Note: As usedherein, the term “annular” refers to a structure that laterally enclosesor surrounds a region of the substrate, regardless of the shape of thestructure. In different embodiments the annular structure may be, forexample, circular, rectangular, polygonal or some other shape.)

In yet another group of embodiments, a mask layer is formed on thesurface of the substrate and an opening is formed in the mask layer. Theedges of the mask layer that surround the opening are sloped. A dopantis implanted through the opening in the mask layer to form asaucer-shaped isolation region with sidewalls underlying the slopededges of the mask layer. The isolation region encloses an isolatedpocket of the substrate.

When isolated pockets are formed in accordance with the invention,shallow dielectric-filled trenches may also be formed within the pocketto provide surface isolation among devices in the same pocket. Moreover,additional dielectric-filled trenches, which may extend to a level belowthe deep floor isolation region, may be formed between the isolatedpockets to provide additional isolation between the pockets. The shallowtrenches inside the isolated pockets and trenches between the isolatedpockets may also be used with conventional isolation structures, such asstructure having chained-implant sidewalls and a deep implanted floorregion.

The invention also includes implanting a region of the same conductivitytype as the substrate between the isolated pockets to help preventpunch-through between adjacent pockets.

The invention also comprises methods of fabricating the above-referencedisolation structures. The methods are generally modular in the sensethat many of the process steps may be performed at different stages ofthe overall process sequence without significantly affecting the natureof the resulting isolation structure. Moreover, the processes generallydo not involve the growth of an epitaxial layer or other processeshaving significant thermal cycles, which means that the dopant regionsremain in an “as implanted” configuration, with minimal lateral andvertical expansion. This permits an increased packing density of thesemiconductor devices and conserves valuable real estate on the surfaceof the semiconductor chip. The methods also include techniques forsharing processing steps in the formation of the various trenchesincorporated in the isolation structures, including deep trenches,shallow trenches, dielectric-filled trenches, and trenches filled withconductive material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are cross-sectional views of a prior art non-isolatedcomplementary-well CMOS process with LOCOS field oxidation. FIG. 1Ashows the structure after complementary-well formation. FIG. 1B showsthe structure after device fabrication before metallization andinterconnection.

FIG. 1C is a detailed cross-sectional view of sidewall spacer N-channelMOSFET surrounded by LOCOS field oxide.

FIG. 1D shows the doping profile of the P-well region under N-channelMOSFET gate.

FIGS. 2A and 2B are cross-sectional views of a prior art non-isolatedcomplementary-well CMOS process with shallow oxide filled trenches. FIG.2A shows the structure after device formation before metallization andinterconnection. FIG. 2B is a detailed cross-sectional view of sidewallspacer N-channel MOSFET surrounded by oxide filled trenches

FIG. 3A shows a prior art process flow for fabricating a prior arttrench and LOCOS field oxide complementary-well CMOS. FIG. 3B is aschematic representation of CMOS devices. FIG. 3C is a schematicrepresentation of a CMOS push-pull driver or inverter. FIG. 3D is aschematic representation of a CMOS cascode clamped push-pull driver.

FIGS. 4A and 4B illustrate several circuits that can benefit fromelectrical isolation. FIG. 4A is a schematic representation of apush-pull driver implemented using totem-pole N-channel MOSFETs. FIG. 4Bis a schematic representation of a Buck topology switching regulator.

FIG. 5A is a cross-sectional view of a prior art high-temperaturejunction-isolated CMOS including an epitaxial layer before metallizationand interconnection.

FIG. 5B shows a process flow for the CMOS of FIG. 5A.

FIG. 5C illustrates several design rules related to isolation and sinkerdiffusions.

FIG. 6 is a cross-sectional view of an epi-less low-thermal budget,fully-isolated CMOS using a LOCOS oxide layer and contoured isolationimplants.

FIGS. 7A-7C illustrate the limitations imposed by the profiles of LOCOSoxide layers on contoured isolation implantation

FIG. 8 is a cross-sectional view of a Type-I trench isolation processwith implanted floor and trench-bottom isolation capable of fullyisolated device integration.

FIG. 9 is a cross-sectional view of a Type-II trench isolation processwith implanted floor isolation capable of fully isolated deviceintegration.

FIG. 10 is a cross-sectional view of a Type-III process capable of fullyisolated device integration using implanted floor and sidewall isolationand non-implanted trench regions.

FIGS. 11A-11C illustrate a fabrication sequence for an implanted floorisolation prior to the trench isolation fabrication sequence.

FIGS. 12A-12E illustrate a Type-I and Type-II trench isolation processwith implanted floor and trench-bottom isolation.

FIGS. 13A-13D illustrate a Type-III trench isolation process withimplanted floor and sidewall isolation.

FIGS. 14A and 14B illustrate a Type-I trench isolation process withimplanted deep P region.

FIGS. 14C and 14D show the design rules of the device shown in FIGS. 14a and 14B with and without a deep P region.

FIGS. 15A-15F illustrate an alternative Type-III trench isolationprocess.

FIG. 16 illustrates various trench isolation processes.

FIG. 17 is a cross-sectional view of a structure produced using aType-III trench isolation process with implanted floor isolation,implanted sidewall isolation, shallow and deep dielectric trenchisolation.

FIG. 18 is a cross-sectional view of a structure produced using a Type-Itrench isolation process with implanted floor isolation, and dielectrictrench sidewall isolation, including shallow and deep dielectric trenchisolation.

FIG. 19 is a cross-sectional view of a structure produced using aType-VI trench isolation process with implanted floor isolation andconformal implanted sidewall isolation, combined with shallow and deepdielectric trench isolation.

FIG. 20 is a cross-sectional view of a structure produced using aType-IV trench isolation process with implanted floor isolation, andconductive/dielectric trench sidewall isolation, including shallowtrench isolation.

FIG. 21 is a cross-sectional view of a structure produced using a Type-Vtrench isolation process with implanted floor isolation,conductive/dielectric trench plus implanted sidewall isolation,including deep and shallow trench isolation.

FIGS. 22A-22C show a Type-I trench isolation process including shallowand deep dielectric trench isolation.

FIGS. 23A-23C show a Type-VI trench isolation process including aconformal implanted isolation layer.

FIGS. 24A-24F show another Type-IV trench isolation process.

FIGS. 25A-25E show a Type-V trench isolation process.

DESCRIPTION OF THE INVENTION

The low-temperature isolation process used to fabricate the devicesshown in FIG. 6 utilizes high-energy implantation contoured by a LOCOSfield oxide layer to achieve the sidewall and floor isolationsurrounding each isolated pocket and device. The scaling limitation ofsuch technology and the maximum transistor density, is however, limitedby how small a LOCOS field oxide region can be realized. At dimensionsmuch larger than photolithographic limitations, the practicalimplementation of the LOCOS process becomes manifest. Such adverseeffects include distorted field oxide shapes, excessive oxide thinning,high stress, high surface state charge, poor quality gate dielectricsand others. Moreover, as discussed with regard to FIG. 7, small LOCOSdimensions lead to thinning of the implant sidewall isolation regionsand a corresponding degradation in the quality of device isolation.

To eliminate the LOCOS size limitation in scaling ICs, an alternativeapproach is to utilize an alternative process manufacturing flow toaccommodate shallow or medium depth trench isolated regions (referred toas “STI”) instead of LOCOS. These dielectrically-filled trenches canthen be combined with high-energy and chained ion implantations to formfloor isolation and potentially to enhance sidewall isolation voltagecapability.

The novel combination of STI for sidewall isolation and high energyimplanted floor isolation represent in various forms, novel methods andapparatus for integrating and isolating devices at high densities,without the need for long high-temperature diffusion or expensiveepitaxial deposition. The isolation structures produced in this mannercan be divided into six categories or “types”, which are herein definedas follows:

-   -   Type-I isolation: a combination of deep high-energy ion        implanted floor isolation and a dielectrically-filled trench        sidewall isolation, with the option for deep and/or shallow        trench isolation not associated with the sidewall isolation    -   Type-II isolation: a combination of a deep high-energy ion        implanted floor isolation and dielectrically-filled trench        sidewall isolation with additional isolation implants connecting        the bottom of the trench to the floor isolation.    -   Type-III isolation: a combination of deep high-energy ion        implanted floor isolation, and chained implant junction sidewall        isolation, with the option for deep and/or shallow trench        isolation not associated with the sidewall isolation    -   Type-IV isolation: a combination of deep high-energy ion        implanted floor isolation, and conformal implant junction        sidewall isolation, with the option for deep and/or shallow        trench isolation not associated with the sidewall isolation    -   Type-V isolation: a combination of a deep high-energy ion        implanted floor isolation and conductive/dielectric filled        trench sidewall isolation with additional isolation implants        connecting the bottom of the trench to the floor isolation    -   Type-VI isolation: a combination of a deep high-energy ion        implanted floor isolation and conductive/dielectric filled        trench sidewall isolation, with the option for shallow trench        isolation not associated with the sidewall isolation        Type-II Epiless Isolation

The device structure 350 of Type II epiless isolation shown in thecross-sectional view of FIG. 8 comprises deep N-type (DN) floorisolation regions 352A and 352B formed in P-type substrate 351 withdielectric filled trenches 355A through 355F and N-type doped sidewallisolation regions 354A through 354F formed at the bottom of thedielectrically filled trenches. Optional deep P-type region (DP) 353 isformed in P-type substrate 351 at a depth shallower than, deeper than,or equal to DN regions 352A and 352B. The result is the formation ofelectrically isolated P-type pockets P₁ through P₄, also designated asregions 356A, 356B, 356D, and 356E, the pockets P₁ through P₄electrically isolated from P-type substrate 351 by a combination ofjunction isolation at the bottom of the pocket and dielectric filledtrenches along the pocket's sidewalls.

In a preferred embodiment of this invention, deep N regions 352A and352B are formed by implanting phosphorus at high-energies without anysignificant high temperature processing after implantation. We refer tosuch deep N-type layers, herein, by the nomenclature “DN”, an acronymfor deep N-type region. Since P-type substrate 351 has no epitaxiallayer grown atop it, DN layers 352A and 352B are not the same as buriedlayers formed using high temperature processing in conventionalepitaxial processes (such as region 202 in prior art device 200 shown inFIG. 5A) despite their similar appearance.

The peak concentration and total vertical width of a conventional buriedlayer is affected by substantial diffusion unavoidably occurring in hightemperature fabrication before, during, and after epitaxial growth. Theproblem of variability in diffused and epitaxial processes occursbecause slight changes in temperature can cause large deviations indopant profiles, a consequence of the exponential dependence ofdiffusivity on temperature.

In the all low-temperature processes disclosed herein, the implanted DNregions 352A and 352V, in contrast, are affected only by the implantenergy (or energies in the case of multiple implants). The resultingprofile is “as-implanted”, and not subject to variability associatedwith thermal processing. In a relative sense, DN region formation shouldgenerally comprise the highest energy implantation in the process, inthe range of 1 MeV (one million-electron-volts) to over 3 MeV.Practically speaking, energies of 1.5 MeV to 2.3 MeV allow deep implantsto be achieved in reasonable times using single- and double-ionizeddopants. Triple-ionized dopant species having a high charge state can beimplanted to a greater depth, but at correspondingly lower beamcurrents. The result is slower implantations. Phosphorus implant dosesfor the DN region may range from 1 E12 cm⁻² to 1E14 cm⁻² but typicallycomprise doses in the 1-5E13 cm⁻² range.

Deep P-type region 353, having the acronym “DP”, may in a preferredembodiment be formed using a high-energy implantation of boron, at anydepth, but generally at a depth equal to or shallower than the DNregions 352A and 352B. The implantation of boron to any given depthrequires a lower energy than phosphorus, e.g. from 0.8 MeV to 1.5 MeV,since boron is a smaller, less massive atom than phosphorus. Boronimplant doses for the DP region 353 may also range from 1E12 cm⁻² to1E14 cm⁻² but may typically comprise doses in the 5E12 cm⁻² to 1E13 cm⁻²range, slightly lighter than the phosphorus DN implants.

The formation of the N-type isolation (NI) regions 354A through 354F isalso accomplished using medium- to high-energy ion implantation into thebottom of trenches 355A through 355F, before the trench is filled withany dielectric material. The NI regions 354A-354F overlap onto DNregions 352A and 352B, completing the isolation in the region beneaththe trenches and above DN regions 352A and 352B, allowing a shallowertrench to be used to perform sidewall isolation. Shallower trenches areeasier to manufacture, i.e. to etch, and to fill.

In device structure 350, four isolated pockets P₁, P₂, P₃ and P₄ (i.e.356A, 356B, 356D, and 356E, respectively) are formed using two DN floorisolation regions 352A and 352B. While the DN regions could beelectrically floating, in general they are biased to a potential morepositive than the substrate, and therefore form a permanently reversebiased P—N junction to their surroundings. The reverse bias present oneach DN region may be the same or different, and may be a fixedpotential or vary with time. For example pockets P₁ and P₂, isolatedfrom the substrate by common floor isolation 352A and trenches 355A and355C; and from one another by trench 355B may contain 5V circuitry.Adjacent pockets P₃ and P₄, isolated from the substrate by common floorisolation 352B and trenches 355D and 355F; and from one another bytrench 355E may contain 12V circuitry, operating without regard to the5V circuitry sharing the same P-type substrate 351.

Inside an isolation region, each isolated P-type pocket may containdevices biased at any potential equal to or more negative than thepocket's corresponding DN bias potential. For example if DN region 352Ais biased to 5V, devices inside the isolation pockets P₁ and P₂ mayoperate up to 5V and as negative as junction breakdowns of an isolateddevice may allow, potentially even more negative than the potential ofP-type substrate 351 itself. The isolated pockets may likewise includeadditional P-type or N-type doped regions introduced either prior orsubsequent to isolation formation. Each pocket may also include one ormore shallow isolation trenches such as shallow isolation trench 357,shown in pocket P₁, to provide surface isolation among devices in thesame pocket. The shallow trench 357 may be formed by a second trenchetch and refill, or preferably may share the same etch and refill stepswith trenches 355A=355F, with an additional mask during the implantationof NI regions 354A-354F to prevent the NI regions 354A-354F from beingimplanted under the shallow trench 357.

Type-I Epiless Isolation

The device structure 370 of Type I epiless isolation shown in FIG. 9comprises DN floor isolation regions 372A and 372B formed in P-typesubstrate 371 with dielectric filled trenches 375A through 375Foverlapping onto the floor isolation regions 372. Optional DP region 373is formed in P-type substrate 371 at a depth that may be shallower than,deeper than, or equal to DN regions 372A and 372B. P-type pockets P₁through P₄, i.e. regions 376A, 376B, 376D, and 376E, are electricallyisolated from P-type substrate 371 by a combination of dielectric filledtrenches 375A-375F circumscribing the regions 376A, 376B, 376D, and 376Eand overlapping onto the floor isolation regions 372A and 372B. P-typesurface region 376C located between trenches 375C and 375D is notisolated because no DN layer is present in that region, and is thereforeelectrically shorted to substrate 371.

In a preferred embodiment of this invention, DN regions 372A and 372Bare formed by implanting phosphorus at high-energies without anysignificant high temperature processing after implantation. Similarly,DP region 373, may be formed using the high-energy implantation ofboron.

Unlike Type II isolation, Type I isolation has no N-type dopantimplanted into the trench bottom. By eliminating the N-type material atthe trench bottom, wafer fabrication requires fewer steps and this mayreduce the manufacturing cost. Moreover, without the NI implant,electrical interactions between the electrical operation of an isolateddevice and the NI layer can be neglected. In Type I isolation, trenchesmust be etched sufficiently deep to overlap directly onto the DN floorisolation regions to perform sidewall isolation. As a result, the trenchdepth needed for Type I isolation using any given depth of the DNregions is deeper than that needed for Type II isolation. Deepertrenches, however, may be more difficult to manufacture, especially toetch, fill, and planarize. In addition, etching deeper trenches mayrequire a wider trench width to allow the etchant and byproduct gassesto uniformly flow during the etching process. Wider trenches, ifrequired, will cause lower device packing densities than narrowershallower trenches.

One way of avoiding the tradeoff between trench width and depth is toutilize trenches with two different depths that are masked and etchedseparately, as shown in structure 580 of FIG. 18. Trenches 584A and 584Bare relatively shallow and narrow for dense device integration. Theseshallow trenches are preferably the same or similar to the existing STIused in a given CMOS technology node, and are used to provide surfaceisolation, i.e. field threshold control, but not complete isolation,between devices in a given isolated P-type pocket. The deeper trenches585A, 585B, 585C, and 585D are at least as deep as the DN floorisolation regions 582A and 582B (or deeper as shown in FIG. 18) toprovide complete electrical isolation among P-type pockets 586A and586B, and substrate 581. The dual-trench process is somewhat morecomplex than the single trench process of FIG. 9, but it is possible toshare the refill and planarization steps, as described more fully below.

Type-III Epiless Isolation

Type III isolation combines a DN region with a chain implanted sidewallisolation region, which may optionally be combined with a dielectricallyfilled trench for enhanced isolation capability. For example, devicestructure 400 of FIG. 10 shows two isolated P-type pockets P₁, and P₂(i.e. 406A, and 406B, respectively) formed using two high-energyimplanted DN floor isolation regions 402A and 402B combined withchain-implanted sidewall isolation regions (NI) 408A, 408B, 408C, and408D. These implanted sidewall isolation regions are formed using aseries of implants of differing energies to vary the depth of the eachparticular implant, the deepest of which overlaps onto the DN floorisolation regions 402A and 402B and the shallowest of which reaches thesurface of the P-type substrate 401. Dielectric filled trenches 405A,405C, 405D and 405F may optionally be included within or adjacent theimplanted sidewall isolation regions 408A, 408B, 408C and 408D toimprove isolation. Optional DP region 403 may be used to suppresspunch-through between adjacent DN regions 402A and 402B.

Sequentially forming a series of phosphorus implants results in acontinuous N-type sidewall isolation region as shown. For example, NIregions 408A and 408B may have an annular or other closed geometricshape, and overlap onto DN region 402A to create P-type region 406A,electrically isolated from substrate 401. Similarly, NI regions 408C and408D may have an annular or other closed geometric shape, and overlaponto DN region 402B to create P-type region 406B, electrically isolatedfrom substrate 401 and from region 406A.

In Type III isolation, the implant used to form sidewall isolation isunrelated to the process of trench formation, so that the trench may beformed inside an NI sidewall isolation region, such as trenches 405A,405C, 408D, or 405F, or may be formed inside an isolated pocket such as405B and 405E. Since the trench in Type III isolation does not have tobe deep enough to overlap onto the DN layer, its use within floatingpockets 406A and 406B does not subdivide the pocket into regionsisolated from one another, i.e. all the devices in pocket P₁ share thecommon potential of P-type region 406A. These shallow trenches arepreferably the same or similar to the existing STI used in a given CMOStechnology node, and are used to provide surface isolation, i.e. fieldthreshold control, but not complete isolation, between devices in agiven isolated P-type pocket.

An alternative embodiment of Type III isolation is shown in devicestructure 560 of FIG. 17. Trenches 564A and 564B are equivalent totrenches 405B and 405E of FIG. 10. Deep trenches 565A, 565B, and 565Creplace shallow trenches 405A, 405C, 405D, and 405F of FIG. 10. The deeptrenches 565A, 565B, and 565C are placed between adjacent DN regions562A and 562B to prevent punch-through, in lieu of DP region 403 of FIG.10. This dual-trench process is somewhat more complex than the singletrench process of FIG. 10, but it is possible to share the refill andplanarization steps, as described more fully below.

Type-IV Epiless Isolation

An example of Type IV epiless isolation is shown in device structure 620of FIG. 20. DN floor isolation regions 622A and 622B are formed inP-type substrate 621. Trenches 625A through 625D overlap onto DN regions622A and 622B. Optional DP region 623 is formed between adjacent DNregions 622A and 622B. P-type pockets 626A and 626B are electricallyisolated from substrate 621 by a combination of trenches 625A-625Dcircumscribing the pockets 626A and 626B and overlapping onto the floorisolation regions 622A and 622B. Optional trenches 624A and 624B arepreferably the same or similar to the existing STI used in a given CMOStechnology node. Trenches 624A and 624B are used to provide surfaceisolation between devices in a given isolated P-type pocket. Trenches625A-625D will generally be wider and deeper than trenches 624A and624B.

Unlike Type I isolation, in which the trenches are completely filledwith a dielectric, the trenches 625 of Type IV isolation include aconductive material 628, such as doped polysilicon, that is used toprovide electrical connection to the DN regions 622. The conductivematerial 628 in each of trenches 625A-625D is surrounded by dielectricmaterial 627, such as deposited oxide, which isolates conductivematerial 628 from the P-type pockets 626A and 626B and the substrate621. In Type IV isolation, trenches 625A-625B are etched at the properdepth to provide good electrical contact between the conductive layer628 and the DN 622. Although formation of the conductive/dielectrictrench fill for Type IV isolation is somewhat more complex than thedielectric-only process of Type I isolation, it provides for a verydense and low-resistance connection to the DN regions. Moreover, it ispossible to share some of the refill and planarization steps with theshallow trenches, as described more fully below.

Type-V Epiless Isolation

An example of Type V epiless isolation is shown in device structure 640of FIG. 21. DN floor isolation regions 642A and 642B are formed inP-type substrate 641. Trenches 645A through 645D are etched aboveportions of DN regions 642A and 642B. Unlike Type IV isolation, trenches645A-645D are not deep enough to contact DN regions 642A and 642Bdirectly. Instead, NI regions 643A through 643D are used to connect thetrenches 645A-645D to the DN regions 642A and 642B. Thus, isolatedP-type pockets 646A and 646B are isolated by DN floor isolation regions642A and 642B below and a combination of trenches 645A-645D and NIregions 643A-643D on the sides.

Trenches 645A-645D of Type V isolation include a conductive material648, such as doped polysilicon, that is used to provide electricalconnection to the DN regions 642A and 642B. The conductive material 648in each trench 645A-645D is surrounded by dielectric material 647, suchas deposited oxide, which isolates conductive material 648 from theP-type pockets 646A and 646B and the substrate 641. The conductivematerial 648 makes electrical contact through NI regions 643A-643D to DNregions 642A and 642B. NI regions 643A-643D are preferably formed by ionimplantation into the bottom of trenches 645A-645D before the trenchrefill is completed, such that the NI regions 643A-643D are self-alignedto trenches 645A-645D. The trenches 645A-645D be shallower than thoseused in Type IV isolation, and may preferably be formed by the sameetching step used for the optional shallow trenches 644A and 644B. Anoptional deep trench 649 may be formed between adjacent DN regions 642Aand 642B. It is possible for trench 649 to share some of the refill andplanarization steps with the shallow trenches 644A, 644B and 645A-645D,as described more fully below.

Type-VI Epiless Isolation

An example of Type VI epiless isolation is shown in device structure 600of FIG. 19. DN floor isolation regions 602A and 602B are formed inP-type substrate 601. DN regions include sidewall portions 603A-603D,which are formed by implantation of the high-energy DN regions 602A and602B through a suitable mask to bring the implant range up to thesurface of the substrate over an appropriate distance. This may beaccomplished, for example, by forming a mask layer over the substratewith sidewalls of a fairly shallow angle, such as 45-75 degrees. This issimilar to the prior art isolation technique shown in FIG. 6, which usesa LOCOS field oxide layer for the masking layer, but in the presentinvention the masking layer does not remain on the wafer, but isremoved. This sacrificial mask layer may be an etched oxide,photoresist, or other material. After implantation of DN regions 602Aand 602B through the sacrificial mask layer, P-type pockets 606A and606B are completely isolated by the DN regions 602A and 602B andsidewall portions 603A-603D. The sidewall portions 603A-603D alsoprovide electrical contact to the DN regions 602A and 602B. Optionalshallow trenches 604A and 604B may be formed within the P-type pockets606A and 606B to provide surface isolation among the devices therein,and optional deep trenches 605A-605C may be formed between adjacent DNregions 602A and 602B to alleviate punch-through.

Isolation Fabrication & Process Sequences

In principle, because there are no high temperatures required to achieveelectrical isolation used the disclosed techniques, the formation of theNI sidewall isolation regions, the dielectric filled trenches, and theDN floor isolation regions can be performed in any order withoutadversely impacting the electrical isolation of integrated devices. Inpractice, however, some fabrication sequences are preferred since theysimplify wafer processing. For example it is easier to implant into thebottom of an etched trench prior to filling the trench since only a lowenergy implant is needed, and it is possible to self-align the implantto the trench. Implanting after the trench filling process requires highenergies to penetrate to the same depth.

FIGS. 11A-11C illustrate one method to form the DN floor isolationregion using high energy ion implantation without the need for hightemperature processing or epitaxy. In FIG. 11A, a mask layer 412 isformed sufficiently thick to block the high energy DN implant. Thismasking material is preferably photoresist, but may also be an oxide orother suitable material. In FIG. 11B, the wafer is patterned by removingthe mask layer 412 in areas where the DN region is to be implanted. Apre-implant oxide layer 413 may be thermally grown or deposited beforeor after to the masking step, or etching of the mask layer 412 can beinterrupted before it is completely removed, leaving oxide layer 413 inthe areas to be implanted. In FIG. 11C, high energy implantation,preferably a phosphorous implant in the range of 1.5 MeV to 4.5 MeV at arelative high dose, preferably in the range of 1 to 5E13 cm−3 is used toform DN floor isolation region 414 in P-type substrate 411 beneath thinoxide layer 413 but not beneath mask layer 412. In a preferredembodiment no trenches are present in the substrate at this time.

FIGS. 12A-12E illustrate the formation of Type II isolation structures.As shown in the cross-sectional view of FIG. 12A, a P-type substrate 421containing DN region 424 has mask layer 425 formed and patterned to formopenings 426. Mask 425 is preferably a deposited oxide hardmask, in therange of 3000-8000 A thick, but alternative materials such asphotoresist may also be used. An optional second layer 433 may be formedand patterned between mask layer 425 and substrate 421. This layer maybe, for example, silicon nitride or other suitable material for use asan etch-stop layer for subsequent planarization.

In FIG. 12B, trenches 427 are etched into substrate 421 to a depth thatis less than the depth of DN region 424, and preferably the same depthas used to form STI in the given CMOS technology, using well-knownplasma or reactive ion etch techniques. FIG. 12C illustrates theformation of NI regions 428 by an implant into the bottom of thetrenches 427 to complete electrical isolation of floating P-type region430. Mask layer 425 used for trench etching is preferably used for thisimplantation, advantageously providing self-alignment of NI regions 428to trenches 427. An optional second mask layer 432 may be deposited andpatterned to prevent the NI implant from forming in trenches 427 thatwill provide surface isolation among devices within floating P-typeregion 430. FIG. 12D shows the structure after mask layer 425 is removedand the trenches 427 are filled by a dielectric material 431, forexample a deposited oxide. The structure is planarized by CMP or othertechniques resulting in planarized structure 420 shown in FIG. 12E,which includes filled trenches 429, DN floor isolation region 424, andNI isolation regions 428, which together isolate floating P-type region430 from P-type substrate 421.

FIGS. 22A-22C illustrate the formation of Type I isolation structures.FIG. 22A shows the isolation structure after formation of DN floorisolation region 662, formation of mask layers 663 and 664, and etchingof shallow trenches 665, using the same process as described in FIG. 12,above. FIG. 22B shows the structure after deposition and patterning ofoptional second mask layer 666. In a preferred embodiment, mask layer664 is nitride or other layer suitable for etch-stop duringplanarization, mask layer 663 is a hard mask material such as depositedoxide, and mask layer 666 is a photoresist or similar material. Deepertrenches 667 are etched through the openings in mask layer 666. Afterthe removal of mask layers 663, 664 and 667, the deep trenches 667 andoptional shallow trenches 665 are refilled simultaneously by dielectricdeposition. The structure is then planarized by CMP or other techniques,resulting in the planarized structure shown in FIG. 22C, which includesdielectric filled deep trenches 669 and DN floor isolation 662 region,which together isolate floating P-type region 670 from P-type substrate661. Optional dielectric filled shallow trenches 668 provide surfaceisolation among devices formed in P-type region 670.

Fabrication of Type III isolation is illustrated in FIGS. 13A-13D. FIG.13A shows the isolation structure 450 after formation of DN region 452,which is implanted at high-energy through first mask layer 453, which ispreferably a deposited and etched hard mask material such as oxide.Second mask layer 455, preferably photoresist, is then deposited andpatterned. A chain-implant of phosphorus is then used to form sidewalljunction isolation regions 456 extending from the surface andoverlapping onto DN floor isolation region 452. Using Type IIIisolation, floating pocket 451B is completely enclosed by N-typejunction isolation on all sides, isolating it from surrounding P-typesubstrate 451A.

In this preferred embodiment, mask layer 453, used to define the lateralextent of DN region 452, is also used to define the outer edge ofsidewall isolation regions 456, thus providing self-alignment betweenregions 452 and 456. To accomplish this, mask 455 layer is defined ontop of (but not overlapping the edge of) mask layer 453 and also on topof the exposed surface of substrate 451A, which may be covered with athin oxide 454. Thus, the phosphorus chain implant may not penetrateeither mask layer 455 or mask layer 453. Thin pre-implant oxide 454 maybe a remnant of prior process steps, or may be grown prior to implantingsidewall isolation regions 456. Using, for example, the process sequenceillustrated in FIGS. 11A-11C, oxide layer 453 defines the outer edge ofboth DN floor isolation region 452 and sidewall isolation regions 456.

In subsequent processing shown in FIG. 13B, the surface oxide layers 453and 454 and mask layer 455 are removed and a new mask layer 457 isdefined using low temperature techniques to avoid diffusion of DN region452. Windows 458A and 456C are defined in the mask layer 457 atop oradjacent sidewall isolation regions 456. Optional windows 458B, notoverlapping the isolation regions 456, may also be formed.

In FIG. 13C, trenches 460A, 460B, and 460C are etched through thewindows in mask layer 457. After mask layer 457 is removed, trenches460A, 460B, and 460C are filled with a dielectric material andplanarized. FIG. 13D shows the resulting isolation structure 450.Regions 456 and 452 provide isolation of P-type region 451B fromsubstrate 451A. Filled trenches 461A and 461C within or adjacentsidewall isolation regions 456, are optional but improve the isolatingability of the structure by completely eliminating the possibility ofeither majority carrier or minority carrier conduction near the surface.Filled trenches 461B provide surface isolation among devices withinregion 451B. By combining these process steps with the deep trench stepsdescribed in FIG. 22, above, it is possible to produce the structure ofFIG. 17, which provides deep trench isolation between adjacent DNregions 562A and 562B. Since the deep and shallow trenches can share thesame dielectric refill and planarization steps, the added processcomplexity is minimal.

FIGS. 23A-23C illustrate the formation of Type VI isolation structures,which include conformal implanted DN regions. FIG. 23A shows one methodof forming the conformal DN region 682. Mask layer 683 is deposited andpatterned using a hard mask layer, such as oxide, or a soft mask layersuch as photoresist. An opening 688 in mask layer 683 is formed with anintentionally sloped sidewall 686. As shown in FIG. 23A, mask layer 683has a thickness t₁ at an outer periphery of the opening 688 and athickness that is significantly less than t₁ at an inner periphery ofthe opening 688. The thickness at the inner periphery is shown to bezero in FIG. 23A, but in other embodiments the thickness may be greaterthan zero in this area. The outer periphery and inner periphery ofopening 688 define the limits of the sloped sidewall 686. As shown inFIG. 23A, intermediate between the outer periphery and the innerperiphery is a point where the thickness of mask layer 683 is t₂.Several possible techniques for this process step are described below.The total thickness t₁ of mask layer 683 is sufficient to completelyprevent implantation of the DN layer. The mask layer 683 has acontinuously decreasing thickness at the location of sidewall 686 suchthat the DN implant penetrates into the substrate 681 at continuouslyvarying depths, conforming to the thickness profile of mask layer 683 atsidewall 686. When the thickness of the mask layer 683 is t₂ the DNimplant just reaches through the sidewall 686 such that it is positionedat the surface of substrate 681. The depth of the DN implant reaches itsmaximum at the inner periphery of the opening 688, where the thicknessof mask layer 683 reaches its minimum and the implant goes the farthestinto the substrate. Conformal DN region 682A, 682B completely isolatesP-type pocket 690 from P-type substrate 681.

FIG. 23B shows another method of forming the conformal DN region 702.Mask layer 703 is deposited and patterned using a hard mask layer, suchas oxide. A second mask layer 704, such as photoresist, is defined overportions of mask layer 703. The openings in mask layer 703 are formedwith intentionally sloped sidewalls 706. The combined thickness of masklayers 703 and 704 is sufficient to completely prevent the N-type dopantused to form DN region 702 from penetrating mask layers 703 and 704 toreach substrate 701. However, the total thickness t₃ of mask layer 703is designed to allow the N-type dopant to penetrate just below thesurface of substrate 701, such that a surface portion 702C of DN region702 is formed where the full thickness of mask layer 703 is exposed. Inthe area below sidewalls 706, mask layer 703 has a gradually decreasingthickness such that the N-type dopant used to form DN region 702penetrates into the substrate 701 at continuously varying depths,conforming to the profile of sidewalls 706 so as to form a slopingportion 702B of DN region 702. In the opening of mask layer 703 betweensidewalls 706, the N-type dopant used to form DN region 702 penetratesinto substrate 701 to form a floor portion 702A of DN region 702.Conformal DN region 702 completely isolates P-type pocket 710 fromP-type substrate 701.

FIG. 23C shows the Type VI isolation structure of FIG. 23A after removalof the masking layers. Conformal DN region 682 is saucer-shaped andforms both the floor isolation and the sidewall isolation, such thatisolated P-type region 690 is completely junction isolated fromP-substrate 681. Subsequent processing may include the formation ofshallow trenches to provide surface isolation within each P-type pocket,and/or deep trenches between adjacent DN regions to preventpunch-through. These process steps may be, for example, the same asdescribed in FIG. 22C. An example of a resulting Type VI isolationstructure is shown in FIG. 19. In its simplest form (i.e. FIG. 23C),Type VI isolation requires only one mask step and a single implant toform complete junction isolation without epitaxy or high-temperaturediffusions. However, it requires development of a mask process thatprovides for controlled sidewall angles to facilitate the conformalimplant.

One method of forming a mask layer with controlled sidewall anglesincludes deposition of an oxide layer, masking with photoresist, andetching the oxide layer with one or more etching processes that etch theoxide layer laterally as well as vertically. For example, a singlereactive ion etching (RIE) process may be optimized to provide such acontrolled sidewall angle. This RIE process may comprise a sequence ofsub-processes with various lateral and vertical etch rates.Alternatively, a sequence of wet etching steps and RIE steps may beemployed to etch the oxide. Instead of oxide, a metal layer orpolysilicon layer could be used as the mask layer, or a stack ofdifferent materials and different etching process could be employed.Moreover, a thick photoresist mask may be formed using a sequence ofdeveloping and baking procedures to produce controlled sidewall angles.

FIGS. 24A-24F illustrate the formation of Type IV isolation structures,which include implanted DN regions contacted by conductive trench refillregions. FIG. 24A shows the structure after formation of the DN region742, as described above, and deposition and patterning of optionalplanarization etch-stop layer 744, made of silicon nitride or othersuitable material, and mask layer 743, preferably a hard mask ofdeposited oxide or other suitable material. A shallow trench 745 isetched into P-substrate 741 through openings in mask 743. Trenches 745are preferably compatible with standard STI of a given CMOS technology.

FIG. 24B shows the structure after patterning and etching of trenches746. These trenches are deeper than trenches 745, and extend into the DNregion 742. Trenches 746 are also wider than trenches 745, to allowformation of dielectric refill in trenches 745 and conductive/dielectricrefill in trenches 746, as described below. By way of example, trenches745 may be about 0.5 micron wide and 0.5 micron deep, while trenches 746may be about 1 micron wide and 1.5 micron deep.

FIG. 24C shows the structure after deposition of a dielectric layer 747.The dielectric layer 747 preferably has good conformality, for example aTEOS deposited oxide may be used. The deposition thickness is designedto completely refill narrow trenches 745, but only cover the sidewallsof wider trenches 746. In the example given here, a 0.3 micron thicknesscould be used to completely refill the 0.5 um wide shallow trenches 745and form a 0.3 micron layer on each sidewall of the deep trenches 746,leaving a 0.4 micron wide space in the deep trenches 746.

FIG. 24D shows the type IV structure after etchback of the dielectriclayer 747. The etchback, preferably done by well-known reactive ionetching techniques, should entirely remove the dielectric 747 from thebottom of the deep trenches 746. In doing so, the dielectric 747 willlikely also be removed from the surface, and the underlying mask layer743 may also be etched, depending on the materials used and theirrelative etch rates. After this etchback step, sidewall dielectriclayers 748B, 748C, 748D, and 748E remain in deep trenches 746, whileshallow trenches 745 are completely filled by dielectric region 748A,which should extend above the original surface of substrate 741.

FIG. 24E shows the structure after deposition of a conductive layer 749,which is preferably highly conductive and conformal, such as in-situdoped polysilicon. The deposition thickness of layer 749 is designed toprovide complete refill of deep trenches 746.

FIG. 24F shows the type IV isolation structure after planarization. Inthis example, the structure has been planarized back to the originalsurface of substrate 741. This is preferably accomplished by CMP and/oretchback processes. The final structure comprises isolated P-type region751 which is isolated by DN 742 on the bottom and by refilled trenches746 on the sides. Trenches 746 are filled by conductive material 750Aand 750B which provide electrical contact to DN region 742. Theconductive refill 750 is surrounded by dielectric 748, such that it isisolated from P-type region 751 and substrate 741.

Type IV isolation advantageously provides very compact electricalconnections to the DN layer, via deep trenches with conductive refill.Moreover, the formation of these trenches shares many steps in commonwith the formation of standard STI isolation within each isolated P-typeregion, including dielectric deposition and planarization steps, sothere is little added process complexity to achieve the DN layercontact.

FIGS. 25A-25E illustrate the formation of type V isolation structures,which include implanted DN regions contacted by conductive trench refillregions via implanted sidewall extensions. FIG. 25A shows the structureafter formation of the DN region 762, as described above, and depositionand patterning of optional planarization etch-stop layer 764, made ofsilicon nitride or other suitable material, and mask layer 763,preferably a hard mask of deposited oxide or other suitable material.Shallow trenches 765 are etched into P-substrate 761 through openings inmask 763. Trenches 765 are preferably compatible with standard STI of agiven CMOS technology. Trenches 766 are etched at the same time astrenches 765. These trenches are wider than trenches 765, to allowformation of dielectric refill in trenches 765 and conductive/dielectricrefill in trenches 766, as described below. By way of example, trenches765 may be about 0.5 micron wide and 0.5 micron deep, while trenches 766may be about 1 micron wide and 0.5 micron deep. Compared to Type IVisolation described above, Type V has an advantage in that only a singletrench mask and etch are required to form the STI and sidewall isolationtrenches.

FIG. 25B shows the structure after deposition of a dielectric layer 767.The dielectric layer preferably has good conformality, for example aTEOS deposited oxide may be used. The deposition thickness is designedto completely refill narrow trenches 765, but only cover the sidewallsof wider trenches 766. In the example given here, a 0.3 micron thicknesscould be used to completely refill the 0.5 um wide shallow trenches 765and form a 0.3 micron layer on each sidewall of the deep trenches 766,leaving a 0.4 micron wide space in the deep trenches 766.

FIG. 25C shows the Type V structure after etchback of the dielectriclayer 767. The etchback, preferably done by well-known reactive ionetching techniques, should entirely remove the dielectric 767 from thebottom of the wide trenches 766. In doing so, the dielectric 767 willlikely also be removed from the surface, and the underlying mask layer763 may also be etched, depending on the materials used and theirrelative etch rates. After this etchback step, sidewall dielectriclayers 768B, 768C, 768D, and 768E remain in deep trenches 766, whileshallow trenches 765 are completely filled by dielectric region 768A,which should extend above the original surface of substrate 761.Implantation of NI regions 772A and 772B is preferably done at thispoint so that these implants are self-aligned to and extend directlybelow trenches 766, without the need for an additional masking step. Oneor more implants are performed to provide a continuous region of N-typedoping connecting the bottom of trenches 766 to DN region 762. Sincethese implants are performed directly into the trench bottom, the energyrequired is minimized, which provides a further benefit in that ahigh-current (high-dose) implant may be used to provide heavily-doped NIregions. Since these NI regions are fairly narrow, heavy doping ishelpful in preventing punch-through. In alternative embodiments, NIregion implants could be performed at a different stage of the process,such as before etchback of the dielectric layer 767 (as in FIG. 25B),and still retain their self-alignment.

FIG. 25D shows the structure after deposition of a conductive layer 769,which is preferably highly conductive and conformal, such as in-situdoped polysilicon. The deposition thickness of layer 769 is designed toprovide complete refill of deep trenches 766.

FIG. 25E shows the Type V isolation structure after planarization. Inthis example, the structure has been planarized back to the originalsurface of substrate 761. This is preferably accomplished by CMP and/oretchback processes. The final structure comprises isolated P-type region771 which is isolated by DN region 762 on the bottom and by refilledtrenches 766 in combination with NI regions 772A and 772B on the sides.Trenches 766 are filled by conductive material 770A and 770B whichprovide electrical contact to DN region 762 via conductive NI regions772A and 772B. The conductive refill 770A and 770B is surrounded bydielectric 768B, 768C, 768D and 768E, such that it is isolated fromP-type region 771 and substrate 761.

Type V isolation advantageously provides very compact electricalconnections to the DN layer, via deep trenches with conductive refill.Moreover, the formation of these trenches shares many steps in commonwith the formation of standard STI isolation within each isolated P-typeregion, including trench masking and etching, dielectric deposition, andplanarization steps, so there is little added process complexity toachieve the DN layer contact. A further benefit of this isolationstructure is the self-alignment of the NI regions to the conductivetrench fill, which minimizes the area consumed by eliminatingmisalignment problems, and also insures that the conductive layer isisolated from the substrate and isolated P-type region.

The formation of a deep P-type region DP, like many of the processoperations described in this disclosure, may be performed prior to orsubsequent to any of the other isolation processes. As illustrated inFIG. 14A, the formation of deep P-type region 483 uses high-energy ionimplantation similar to the formation of DN region 482. P-type substrate481 containing high-energy implanted DN floor isolation region 482 ismasked by photoresist 488 and implanted with boron at a high energy toform DP region 483.

The DP process may use photoresist to define the implant, or etchedthick oxide or a combination of both. For example in FIG. 14A, oxidelayers 485A, 485B, and 485C represent oxide layers remaining from priorprocessing steps used in forming DN region 482. Photoresist layer 488 isfirst used to mask and etch through thick oxide layer 485 to form layers485B and 485C. The photoresist must remain during implantation toprevent unwanted penetration of the boron through thin oxide layer 483over the DN region 482. Alternatively, the oxide layers from previousprocesses may be removed and re-grown uniformly before masking andimplantation of the DP region 483. If the re-grown oxide layer is thin,e.g. a few hundred angstroms, then a photoresist layer may need to bepresent during implantation. If the re-grown oxide layer is thick, e.g.several microns, then the oxide layer may be masked and etched andoptionally the photoresist layer may be removed prior to implantation.

The resulting deep P-type region may be used to reduce the risk ofpunch-through breakdown between adjacent isolation regions. For example,the Type II isolation structure 490 in FIG. 14B includes DN regions 492Aand 492B formed in P-type substrate 491A. Floor isolation DN region 492Ais overlapped by NI sidewall isolation region 484A and NI sidewallisolation region 484A is overlapped by trench sidewall isolation 495A toform floating P-type region 491B. Similarly, floor isolation DN region492B is overlapped by NI sidewall isolation region 484B and NI sidewallisolation region 484B is overlapped by trench sidewall isolation 495B toform floating P-type region 491C. In this example, DN layers 492A and492B may potentially be biased to different potentials during operation.Their minimum spacing is reduced by the introduction of DP region 493,interposed between the two DN layers 492A and 492B. To understand thisbenefit, the impact of punch-through breakdown must be considered.

In the cross-sectional view of FIG. 14C, two DN regions 502A and 502Bare separated by P-type substrate 501 at a distance Δx_(DN). Assume DNlayer 502A and P-type substrate 501 are both grounded. With zero bias,only a small depletion region 503A develops around the P—N junctionformed between the DN region 502A and the substrate 501. DN region 502B,however, is biased at a potential +V and thus forms a much widerdepletion region 503B extending into the lightly-doped substrate side ofthe junction by a distance x_(D) depending on the doping concentrationof P-type substrate 501 and the applied voltage V. As long as thedepletion region does not extend across the entire distance, i.e.Δx_(DN)>x_(D), then no current will flow between the two DN regions 502Aand 502B. As such, the two DN regions 502A and 502B may be consideredisolated from one another. If however, the two DN regions 502A and 502Bare placed too closely to one another, that is whenever Δx_(DN)≈x_(D),punch-through breakdown will occur and unwanted current will flowbetween the two DN regions 502A and 502B. Punch-through breakdown is notactually a breakdown mechanism, but represents a barrier loweringphenomena of an N—I—N junction and exhibits an increase of leakagehaving a “soft breakdown” current-voltage characteristic.

In FIG. 14D, grounded DN region 513A and P-type substrate 511 areseparated from DN region 513B biased at a potential +V by a distanceΔx_(DN). P-type implanted DP region 515 having a concentration higherthan that of substrate 511, is formed between the two DN regions 513Aand 513B at a distance Δx_(DP) from biased DN layer 513B. At the voltagewhere depletion region 514B extends to the edge of the DP region 515,i.e. Δx_(DP)≈x_(D), the depletion region becomes pinned to a fixeddimension. Beyond that condition, the electric field continues toincrease with increasing potential, concentrating between the DP and DNregions, until at some voltage avalanche breakdown occurs. Since thisP—I—N like junction reach-through avalanche occurs in the bulk, theelectric field at breakdown occurs in the range of 25 MV/cm to 35MV/cm—exhibiting avalanche at a voltage far higher than the onset ofpunch-through that would occur if DP region 515 were absent.

The DP region therefore suppresses punch-through breakdown and allowsadjacent DN floor isolation regions 513A and 513B to be more closelypacked without suffering high leakage and punch-through. This techniqueis generally applicable to all of the isolation structures describedherein. Alternatively, a deep trench may be formed between adjacent DNregions to allow them to be closely packed without suffering highleakage and punch-through, as shown by way of example in FIG. 17 andFIG. 18.

FIGS. 15A-15F illustrate that the sequence of the implants in themethods described herein may be re-ordered without substantiallychanging the resulting isolation structure. For example, in FIG. 15A,oxide layer 522 in grown atop P-type substrate 521, and subsequentlymasked by photoresist layer 523 and etched to form opening 524 as shownin FIG. 15B. A phosphorus chain-implant comprising a sequence ofimplants of varying doses and energies is then implanted through opening524 to form NI sidewall isolation regions 525, as shown in FIG. 15C.

In FIG. 15D, oxide layer 522 is masked by a photoresist layer 526, andits center portion is removed, allowing a high energy implant topenetrate deep into substrate 521 to form DN floor isolation region 527,which is self-aligned to and overlapped by NI sidewall isolation regions525, thereby isolating P-type region 528 from substrate 521. As shown inFIG. 15E, substrate 521 is then covered with an oxide layer 529, whichis patterned to form openings 530A, 530B, and 530C. Substrate 521 isetched to form trenches 531A-531C. The trenches 531A-531C are filledwith dielectric material and planarized, as shown in FIG. 15F. Theresulting structure includes dielectric-filled trenches 531A and 531Clocated within NI sidewall isolation regions 525, and adielectric-filled trench 531B within isolated region 528. It will beunderstood that other trenches, similar to 531B, could readily be formedduring the same process in other regions of substrate 521. The resultingstructure 520 is nearly identical to the structure 450 shown in FIG.13D, despite its differing fabrication sequence.

While the resulting structure shown in FIG. 15F illustrates a Type IIIisolation structure, those skilled in the art can change the fabricationsequence of the other isolation processes in a similar manner withminimal impact electrically. This flexibility is exemplified by variousprocess sequences illustrated in flow chart 540 shown in FIG. 16. In theflow chart 540, cards shown with clipped corners represent optionalprocess steps. Process flow 541 is capable of implementing either Type Ior Type II isolation, depending on whether the NI implant step isperformed or skipped. Process flows 542 and 543 represent two differentways to implement Type III isolation.

It should be noted that not every possible process flow is representedin flow chart 540. For example, the DP region may be introduced after orbefore either the DN floor isolation implant and also before or afterthe NI isolation sidewall chain implant steps. In other options, deeptrench steps may be included, a second shallow trench may be included,and some trenches may be filled with a combination of conductive anddielectric material.

While specific embodiments of this invention have been described, itshould be understood that these embodiments are illustrative only, andnot limiting. Many additional or alternative embodiments in accordancewith the broad principles of this invention will be apparent to those ofskill in the art.

1. (canceled)
 2. A method of forming an isolation structure in asemiconductor substrate of a first conductivity type, the substratehaving a top surface, the method comprising: implanting a dopant of asecond conductivity type opposite to the first conductivity type to forma floor isolation region, the dopant being implanted with sufficientenergy such that an upper junction of the floor isolation region islocated below the top surface of the substrate; forming a mask layerover the top surface of the substrate; forming an opening in the masklayer; etching the substrate through the opening in the mask layer toform an annular trench in the substrate, a bottom of the annular trenchbeing located above the floor isolation region; implanting a dopant ofthe second conductivity type through the bottom of the trench to form asidewall isolation region, the sidewall region extending downward atleast to the floor isolation region; and filling the annular trench witha dielectric material so as to form an isolated pocket of the substrate.3. The method of claim 2 further comprising planarizing the top surfaceof the substrate.
 4. The method of claim 2 comprising: forming a secondopening in the mask layer over the area of the isolated pocket; etchingthe substrate through the second opening in the mask layer to form asecond trench, the second trench having a bottom above the floorisolation region; forming a second mask layer in the second trench;allowing the second mask layer to remain in the second trench during theimplanting of the dopant of second conductivity type; removing thesecond mask layer from the second trench; and filling the second trenchwith the dielectric material.
 5. A method of forming an isolationstructure in a semiconductor substrate of a first conductivity type, thesubstrate having a top surface and not comprising an epitaxial layer,the method comprising: implanting a dopant of a second conductivity typeopposite to the first conductivity type to form a floor isolationregion, the dopant being implanted with sufficient energy such that anupper junction of the floor isolation region is located below the topsurface of the substrate; forming a mask layer over the top surface ofthe substrate; forming an opening in the mask layer; performing multipleimplants of the dopant of the second conductivity type through theopening in the mask layer to form an annular region extending downwardfrom the top surface of the substrate at least to the floor isolationregion, the floor isolation region and the annular region togetherforming an isolated pocket of the substrate; forming a second mask layerover the top surface of the substrate; forming an opening in the secondmask layer, the opening in the second mask layer being located at leastin part over the annular region; etching the substrate through theopening in the second mask layer to form a trench, a bottom of thetrench being located above the upper junction ASSOCIATES of the floorisolation region; and filling the trench with a dielectric material. 6.The method of claim 5 comprising: forming a second opening in the secondmask layer over the area of the isolated pocket; etching the substratethrough the second opening in the second mask layer to form a secondtrench, the second trench having a bottom above the floor isolationregion; and filling the second trench with the dielectric material. 7.The method of claim 5 comprising planarizing the top surface of thesubstrate.
 8. A method of forming an isolation structure in asemiconductor substrate of a first conductivity type, the substratehaving a top surface and not comprising an epitaxial layer, the methodcomprising: implanting a dopant of a second conductivity type oppositeto the first conductivity type to form a floor isolation region, thedopant being implanted with sufficient energy such that an upperjunction of the floor isolation region is located below the top surfaceof the substrate; forming a mask layer over the top surface of thesubstrate; forming an opening in the mask layer; etching the substratethrough the opening in the mask layer to form an annular trench in thesubstrate, the annular trench having a sidewall and a bottom, the bottomof the annular trench being located in the floor isolation region, thefloor isolation region and the annular trench together forming anisolated pocket of the substrate; forming a dielectric layer on thebottom and sidewall of the annular trench; removing the dielectric layerfrom the bottom of the annular trench while leaving the dielectric layeron the sidewall of the annular trench; and introducing a conductivematerial into the annular trench, the conductive material being inelectrical contact with the floor isolation region.
 9. The method ofclaim 8 comprising: forming a second opening in the mask layer, thesecond opening being located over an area of the isolated pocket;etching the substrate through the second opening in the mask layer toform an second trench in the substrate, a bottom of the second trenchbeing located above the floor isolation region; and filling the secondtrench with a dielectric material.
 10. The method of claim 9 whereinforming a dielectric layer on the bottom and sidewall of the trenchcomprises filling the second trench with a dielectric material.
 11. Themethod of claim 8 comprising planarizing the top surface of thesubstrate.
 12. A method of forming an isolation structure in asemiconductor substrate of a first conductivity type, the substratehaving a top surface and not comprising an epitaxial layer, the methodcomprising: implanting a dopant of a second conductivity type oppositeto the first conductivity type to form a floor isolation region, thedopant being implanted with sufficient energy such that an upperjunction of the floor isolation region is located below the top surfaceof the substrate; forming a mask layer over the top surface of thesubstrate; forming an opening in the mask layer; etching the substratethrough the opening in the mask layer to form an annular trench in thesubstrate, the annular trench having a sidewall and a bottom, the bottomof the annular trench being located above the floor isolation region;forming a dielectric layer on the bottom and sidewall of the annulartrench; removing the dielectric layer from the bottom of the annulartrench while leaving the dielectric layer on the sidewall of the annulartrench; implanting a dopant of the second conductivity type through thebottom of the trench to form a sidewall isolation region, the sidewallregion extending downward at least to the floor isolation region; andintroducing a conductive material into the annular trench, theconductive material being in electrical contact with the sidewallisolation region, the floor isolation region, the sidewall isolationregion and the annular trench together forming an isolated pocket of thesubstrate.
 13. The method of claim 12 comprising: forming a secondopening in the mask layer, the second opening being located over an areaof the isolated pocket; etching the substrate through the second openingin the mask layer to form an second trench in the substrate, a bottom ofthe second trench being located above the floor isolation region; andfilling the second trench with a dielectric material.
 14. The method ofclaim 13 wherein forming a dielectric layer on the bottom and sidewallof the trench comprises filling the second trench with a dielectricmaterial.
 15. The method of claim 12 comprising planarizing the topsurface of the substrate.